Method for the production of a light-to-electricity converter made entirely from silicon for a giant photoconversion

The production process according to

• wherein the performing of the ion implantation comprises:
• 1) performing RCA cleaning,
• 2) performing thermal oxidation to obtain a thermal oxide layer to a depth of 1000 Å,
• 3) performing a first implantation of boron through the rear face of the crystalline silicon material and the thermal oxide layer,
• 4) depositing resin on the rear face,
• 5) performing photolithography of the rear face to obtain a calibration figure,
• 2 6) performing thinning of the front face of the crystalline silicon material, 50 Å,
• 7) removing the resin on the rear face,
• 8) applying a polysilicon layer having a thickness of 0.2 micrometers on the crystalline silicon material, and applying the implantation mask on the polysilicon layer,
• 9) performing photolithography of different fingers with different spacings on the polysilicon laver, all the fingers having an identical width of 500 micrometer.
• 10) performing a second ion implantation of amorphizing phosphorus, 180 keV, 7.1014 At/cm2,
• 11) removing all of the polysilicon layer, and
• 12) performing a third implantation of phosphorus with an overdoping profile, 0.25 keV, 7.101At/cm2,
• and wherein the method additionally comprises, after the performing of the at least one sequence of thermal treatment:
• 13) providing a first protective resin for protection of the front face of the crystalline silicon material,
• 14) performing photolithographic etching of a grid comprising contact fingers on the rear face,
• 15) performing photolithographic etching of contact fingers having a thickness of 1000 Å,
• 16) removing the first protective resin from the front face,
• 17) depositing an aluminum layer on the rear face having a depth of 2 mircometers,
• 18) providing a second protective resin for protection of the rear face,
• 19) performing photolithography of a grid on the front face,
• 20) performing photolithogrpahy etching of the comb by etching 50 Å of SiO2,
• 21) removing the second protective resin from the rear face,
• 22) etching contacts for removal,
• 23) depositing a double layer Ti/Au-150 microns/1 micron,
• 24) performing lifting (lift off),
• 25) depositing a layer of SiO2 by CVD or cathode sputtering on the front face,
• 26) providing a third protective resin of protection of the rear face,
• 27) performing photolithographic etching of the front face contacts,
• 28) performing oxide-assisted photolithographic etching of the front face contact,
• 29) removing the third protective resin on the rear face, and
• 30) performing annealing of the contacts under N2H2 .

The production process according to claim,

• wherein the performing of the ion implantation comprises:
• 1) performing RCA cleaning,
• 2) performing thermal oxidation to form a thermal oxide layer having a thickness of 1000 Å,
• 2 3) performing a first implantation of boron on the rear face of the crystalline silicon material through the thermal oxide layer,
• 2 4) providing the first protective resin for protection of the front face.
• 5) performing lithographic etching of an active zone and of calibration figure of the front face,
• 6) removing any SiO2 from the front face,
• 7) removing the first protective resin on the front face,
• 8) depositing P2O5 oxide on the front face from a diffusion source through a passivation layer,
• 9) performing P diffusion,
• 10) thinning of P2O5 oxide on the front face,
• 11) performing annealing of the P diffused in the performing of the P diffusion 9),
• 12) providing the implantation mask, by deposition of a layer of polysilicon having a thickness of 0.2 micrometers,
• 13) performing photolithographic etching of the layer of polysilicon, providing several spacings between fingers, the spacings being selected from the group consisting of 100, 200, and 500 micrometers, the fingers have a width of 500 nanometers,
• 14) performing a second implantation of phosphorus on the front face, with 180 keV and 7.1014 At/cm2, and
• 2 15) removing entirely the layer of polysilicon.