Method for microstructure modification of conducting lines
AssigneeYuan Ze University
InventorsCheng En Ho, Cheng Yu Lee, Ping Chou Lin, Chih Pin Pan, Chih Hao Chang
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Abstract
A method for microstructure modification of conducting lines is provided. An electroplating process is performed to deposit the metal thin film/conducting line(s) with a face-centered cubic (FCC) structure and a preferred crystallographic orientation over a surface of a substrate. The metal thin film/conducting line(s) is subsequently subjected to a thermal annealing process to modify its microstructure with the grain sizes in a range of 5 μm to 100 μm. The thermal annealing process is conducted at the temperature of above 25 degrees Celsius and below 240 degrees Celsius.
Claims8
A method for microstructure modification of conducting lines, comprising:
- performing an electroplating process to deposit a metal thin film with a preferred crystallographic orientation over a surface of a substrate;
- and
- performing a heat treatment on the metal thin film, to make the metal thin film having the crystal grain sizes in a range of 5 μm to 100 μm, wherein the heat treatment is conducted at a temperature in a range of above 25 degree Celsius and below 240 degree Celsius;
- wherein the metal thin film has a plurality of crystal grains with the preferred crystallographic orientation before the heat treatment is applied to the metal thin film and less than 50% of structure surface of the metal thin film can have the (111) crystal plane preferred orientation with a nanotwinned structure.
Dependencies are inferred from the claim text.