Resonant pressure sensor with improved linearity

A resonant pressure sensor, comprising:

• a housing;
• and
• a pressure sensing unit that detects a static pressure based on a change value of a resonance frequency and that comprises:
• a housing-fixed portion that is fixed to the housing;
• a substrate that comprises:
• a substrate-fixed portion that is fixed to the housing-fixed portion;
• and
• a substrate-separated portion that is separated from the housing-fixed portion and extends from the substrate-fixed portion;
• a pressure-receiving fluid that is interposed in a gap between the housing-fixed portion and the substrate and envelops the substrate;
• and
• a first resonator that is disposed in the substrate-separated portion and that detects the change value of the resonance frequency based on a strain in the substrate caused by the static pressure applied by the pressure-receiving fluid, wherein
• the first resonator is made of a semiconductor material that comprises an impurity,
• a concentration of the impurity is 1×1020 (cm−3) or higher, and
• an atomic radius of the impurity is smaller than an atomic radius of the semiconductor material.