Semiconductor layer stack and method for producing same
AssigneesOtto-Von-Guericke-Universitaet Magdeburg, AZUR SPACE Solar Power GmbH
InventorsArmin Dadgar, André Strittmatter
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Abstract
A semiconductor layer stack, a component made therefrom, a component module, and a production method is provided. The semiconductor layer stack has at least two layers (A, B), which, as individual layers, each have an energy position of the Fermi level in the semiconductor band gap, E F - E V < E G 2 applying to the layer (A) and E L - E F < E G 2 applying to the layer (B), with EF the energy position of the Fermi level, EV the energy position of the valence band, EL the energy position of a conduction band and EL−EV the energy difference of the semiconductor band gap EG, the thickness of the layers (A, B) being selected in such a way that a continuous space charge zone region over the layers (A, B) results.
Claims9
A semiconductor layer stack comprising:
- at least two layers, a first layer and a second layer of the at least two layers each having an energy position of a Fermi level in a semiconductor band gap of
- E
- F
- -
- E
- V
- <
- E
- G
- 2
- applying to the first layer and
- E
- L
- -
- E
- F
- <
- E
- G
- 2
- applying to the second layer, with EF being an energy position of the Fermi level, EV the energy position of a valence band, EL the energy position of a conduction band and EL−EV the energy difference of the semiconductor band gap,
- wherein a thickness of the layers is selected such that a continuous space charge zone region over the first and second layers results.
A method for producing a semiconductor layer stack comprising:
- providing a substrate in a system for the deposition of semiconductors;
- and
- applying a sequence of at least two layers, a first layer and a second layer of the at least two layers having an energy position of a Fermi level in a semiconductor band gap of
- E
- F
- -
- E
- V
- <
- E
- G
- 2
- applied to the first layer and
- E
- L
- -
- E
- F
- <
- E
- G
- 2
- applied to the second layer;
- selecting a thickness of the first and second layers such that a continuous space charge zone region of
- W
- A
- +
- W
- B
- =
- 2
- ·
- ɛ
- s
- q
-
- (
- N
- A
- +
- N
- B
- N
- A
- ·
- N
- B
- )
-
- Ψ
- bi
- over the first and second layers results, and DA≤WA and DB≤WB applies with WA and WB of the space charge zone and NA and NB being the dopant concentrations in the first and second layers A and B, εS the dielectric constant, q the elementary charge and Ψbi the built-in potential difference, which is identical to the energy difference of the Fermi level.
Dependencies are inferred from the claim text.