Temperature controlled secondary electrode for ion control at substrate edge

A process kit for use in a substrate processing chamber, comprising:

• an annular electrode configured to surround an electrostatic chuck, wherein the annular electrode includes an upper portion bonded to a lower portion and an annular channel disposed at an interface between the upper portion and the lower portion and a first channel fluidly coupled to the annular channel;
• a dielectric ring coupled to a lower surface of the annular electrode;
• and
• a coolant supply line extending through the dielectric ring and partially through the annular electrode to the annular channel.

A substrate support, comprising:

• an electrostatic chuck having an electrode embedded therein;
• and
• an annular electrode configured to surround the electrostatic chuck, wherein the annular electrode includes an upper portion bonded to a lower portion and an annular channel disposed at an interface between the upper portion and the lower portion;
• wherein the annular electrode includes an annular channel disposed in at least one of the upper portion and the lower portion;
• and wherein the annular electrode is configured to flow a coolant through the annular channel to cool the annular electrode;
• a base plate coupled to the electrostatic chuck and the annular electrode;
• a dielectric plate disposed between the electrostatic chuck and the base plate to electrically isolate the electrostatic chuck from the base plate;
• a dielectric ring disposed about the dielectric plate and between the annular electrode and the base plate to electrically isolate the electrostatic chuck from the base plate;
• and
• a coolant supply line extending from a bottom surface of the base plate to the annular channel via the dielectric ring.