Processing for forming single-grain near-field transducer
AssigneeSeagate Technology LLC
InventorsMichael Christopher Kautzky, Tong Zhao, Li Wan, Xiaolu Kou
Life of this patent
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Abstract
A method includes forming a single-crystal-like metal layer on a metal seed layer, the metal seed layer formed on a sacrificial wafer. An anchor layer is formed on the single-crystal-like metal layer. The single-crystal-like metal layer is separated from the sacrificial wafer via the anchor layer. The single-crystal-like metal layer is transported via the anchor layer to a target substrate having one or more recording head subassemblies. The single-crystal-like metal layer is joined with the recording head, the single-crystal-like metal layer being integrated with the recording head as a near-field transducer.
Claims18
A method comprising:
- forming a metal layer on a metal seed layer, the metal layer comprising a platinum group metal and having a structure with either no grain boundaries or coherent grain boundaries only, the metal seed layer formed on a sacrificial wafer, wherein the metal layer is formed with a predetermined crystalline orientation relative to the sacrificial wafer;
- forming an anchor layer on the metal layer;
- separating the metal layer from the sacrificial wafer via the anchor layer;
- transporting, via the anchor layer, the metal layer to a target substrate comprising one or more recording head subassemblies;
- and
- joining the metal layer with the recording head, the metal layer being integrated with the recording head as a near-field transducer, and wherein joining the metal layer with the recording head comprises rotating the anchor layer relative to the target substrate to provide in-plane orientation control of the near-field transducer relative to an air-bearing surface of the recording head.
A method comprising:
- forming a metal layer on a metal seed layer, the metal layer comprising a platinum group metal and having a structure with either no grain boundaries or coherent grain boundaries only, the metal seed layer formed on a sacrificial wafer;
- forming an anchor layer on the metal layer;
- separating the metal layer from the sacrificial wafer via the anchor layer;
- transporting, via the anchor layer, the metal layer to a target substrate comprising one or more recording head subassemblies;
- and
- joining the metal layer with the recording head, the metal layer being integrated with the recording head as a near-field transducer, wherein joining the metal layer with the recording head comprises surface activated bonding using a plasma or ion beam to remove surface contamination from mating surfaces of the metal layer and the recording head.
Dependencies are inferred from the claim text.