MEMS RF-switch with near-zero impact landing

A method of operating a MEMS ohmic switch (300), wherein the switch (300) includes:

• a substrate (101) having one or more anchor electrodes (108), a plurality of pull-down electrodes (104A-104C), a first RF electrode (302), and a second RF electrode (304) disposed thereon;
• a MEMS bridge coupled to the one or more anchor electrodes (108) with an anchor contact layer (208);
• a dielectric layer (202) disposed over the plurality of pull-down electrodes (104A-104C);
• a center stopper (314) coupled to the dielectric layer (202) and disposed under a substantial center of the MEMS bridge, wherein the center stopper (314) is disposed between the first RF electrode (302) and the second RF electrode (304);
• a first RF contact (306) coupled to the first RF electrode (302) and a second RF contact (308) coupled to the second RF electrode (304);
• and
• an additional stopper (310) disposed on the dielectric layer (202), wherein the additional stopper (310) is disposed between the anchor contact layer (208) and the first RF contact (306) and wherein the first RF contact (306) is disposed between the additional stopper (310) and the center stopper (314), the method comprising:
• moving the MEMS bridge a first distance to contact the center stopper (314) by applying a voltage to one or more of the plurality of pull-down electrodes (104A-104C);
• moving the MEMS bridge a second distance to contact the additional stopper (310) by continuing the voltage or by applying a first additional voltage to one or more of the plurality of pull-down electrodes (104A-104C);
• and
• moving the MEMS bridge a third distance to contact the RF contact (306) by continuing the voltage or by applying a second additional voltage to one or more of the plurality of pull-down electrodes (104A-104C).