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US 11,411,160 B2Granted
Silicon-based Josephson junction for qubit devices
AssigneeInternational Business Machines Corporation
InventorsSteven J. Holmes, Devendra K. Sadana, Brent A. Wacaser, Damon Farmer
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Abstract
Techniques regarding qubit devices comprising silicon-based Josephson junctions and/or the manufacturing of qubit devices comprising silicon-based Josephson junctions are provided. For example, one or more embodiments described herein can comprise an apparatus that can include a Josephson junction comprising a tunnel barrier positioned between two vertically stacked superconducting silicon electrodes.
Claims12
An apparatus, comprising:
- a Josephson junction comprising a tunnel barrier positioned between two vertically stacked superconducting silicon electrodes, wherein the two vertically stacked superconducting electrodes comprise a first superconducting electrode and a second superconducting electrode, and wherein the first superconducting silicon electrode and the second superconducting silicon electrode each comprise a laser doped crystalline silicon material doped with boron, wherein a concentration of the boron in each of the first superconducting electrode and the second superconducting electrode is greater than or equal to 4 atomic percent boron and less than or equal to 11 atomic percent boron;
- and
- isolation layer positioned on the tunnel barrier and connected to a first side of the first superconducting electrode and a second side of the first superconducting electrode such that the isolation layer electrically isolates the first side of the first superconducting electrode and the second side of the first superconducting electrode, the first side being opposite the second side.
An apparatus, comprising:
- a Josephson junction comprising a dielectric tunnel barrier positioned between two superconducting silicon electrodes, wherein the superconducting silicon electrodes comprise a first superconducting electrode and a second superconducting electrode, and wherein at least one of the first superconducting silicon electrode or the second superconducting silicon electrode comprises a laser doped crystalline silicon material doped with boron, wherein a concentration of the boron in the first superconducting electrode or the second superconducting electrode is greater than or equal to 4 atomic percent boron and less than or equal to 11 atomic percent boron;
- and
- isolation layer positioned on the dielectric tunnel barrier and connected to a first side of the first superconducting electrode and a second side of the first superconducting electrode such that the isolation layer electrically isolates the first side of the first superconducting electrode and the second side of the first superconducting electrode, the first side being opposite the second side.
Dependencies are inferred from the claim text.