Image sensor
AssigneeSamsung Electronics Co., Ltd.
InventorsGwi-Deok Ryan Lee, Taeyon Lee
Life of this patent
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Abstract
An image sensor may include a substrate including a plurality of unit pixel regions and having first and second surfaces facing each other. Each of the unit pixel regions may include a plurality of floating diffusion parts spaced apart from each other in the substrate, storage nodes provided in the substrate to be spaced apart from and facing the floating diffusion parts, a transfer gate adjacent to a region between the floating diffusion parts and the storage nodes, and photoelectric conversion parts sequentially stacked on one of the first and second surfaces. Each of the photoelectric conversion parts may include common and pixel electrodes respectively provided on top and bottom surfaces thereof and each pixel electrode may be electrically connected to a corresponding one of the storage nodes.
Claims20
An image sensor, comprising:
- a substrate including a plurality of unit pixel regions, the substrate having first and second surfaces facing each other,
- wherein each of the unit pixel regions comprises:
- a plurality of floating diffusion parts, which are arranged in a line and spaced apart from each other in the substrate;
- a plurality of storage nodes provided in the substrate and spaced apart from the floating diffusion parts, wherein the storage nodes face the floating diffusion parts respectively;
- a transfer gate adjacent to a region between the floating diffusion parts and the storage nodes;
- a plurality of photoelectric conversion parts sequentially stacked on the first surface or the second surface of the substrate,
- wherein the photoelectric conversion parts absorb lights with different wavelengths and generate electric charges from the absorbed lights, and the electric charges are transferred from the photoelectric conversion parts to their corresponding storage nodes, and
- wherein a signal from a first one of the storage nodes to a corresponding first one of the floating diffusion parts is simultaneously transferred with a signal from a second one of the storage nodes to a corresponding second one of the floating diffusion parts by the transfer gate in one of the unit pixel regions.
An image sensor, comprising:
- first, second and third layers disposed at a first side of a substrate, the first layer configured to detect a light having a wavelength corresponding to a first color, the second layer configured to detect a light having a wavelength corresponding to a second color, and the third layer configured to detect a light having a wavelength corresponding to a third color;
- a first storage node connected to the first layer;
- a second storage node connected to the second layer;
- a third storage node connected to the third layer;
- first, second and third floating diffusion parts disposed at a second side of the substrate, the first floating diffusion part facing the first storage node, the second floating diffusion part facing the second storage node, and the third floating diffusion part facing the third storage node;
- and
- a transfer gate disposed adjacent to the first floating diffusion part,
- wherein a signal from the first storage node to the first floating diffusion part is simultaneously transferred with a signal from the second storage node to the second floating diffusion part by the transfer gate in one, of the unit pixel regions.
An image sensor, comprising:
- first, second and third layers disposed at a first side of a substrate, the first layer configured to detect a light having a wavelength corresponding to a first color, the second layer configured to detect a light having a wavelength corresponding to a second color, and the third layer configured to detect a light having a wavelength corresponding to a third color;
- first, second and third storage nodes sequentially arranged in a first direction in the substrate adjacent to the first side, the first storage node connected to the first layer, the second storage node connected to the second layer, and the third storage node connected to the third layer;
- first, second and third floating diffusion parts sequentially arranged in the first direction in the substrate adjacent to the first side, the first, second and third floating diffusion parts spaced apart from the first, second and third storage nodes in a second direction perpendicular to the first direction;
- and
- a single transfer gate on the first side of the substrate, the single transfer gate extending between the first storage node and the first floating diffusion part, between the second storage node and the second floating diffusion part, and between the third storage node and the third floating diffusion part.
Dependencies are inferred from the claim text.