Memory device

A memory device, comprising:

• a first ferromagnetic layer;
• an insulating layer above the first ferromagnetic layer;
• a second ferromagnetic layer above the insulating layer, the second ferromagnetic layer including iron atoms;
• an intermediate layer on an upper surface of the second ferromagnetic layer, the intermediate layer including one or more elements identical to one or more elements in the second ferromagnetic layer;
• a capping layer on an upper surface of the intermediate layer, the capping layer including one or more elements identical to one or more of the elements in the intermediate layer;
• and
• an electrode on an upper surface of the capping layer, the electrode including one or more elements identical to one or more of the elements in the capping layer and including a material having a Vickers hardness higher than a Vickers hardness of an iron atom.

A memory device comprising:

• a first ferromagnetic layer;
• an insulating layer above the first ferromagnetic layer;
• a second ferromagnetic layer above the insulating layer, the second ferromagnetic layer including iron atoms;
• and
• a conductive capping layer on an upper surface of the second ferromagnetic layer, the capping layer including one or more elements identical to one or more elements in the second ferromagnetic layer, and including a material having a Vickers hardness higher than a Vickers hardness of an iron atom,
• wherein the capping layer includes an oxide, a nitride, or an oxynitride of one or more elements in the second ferromagnetic layer;
• an oxide, a nitride, or an oxynitride of a compound of two or more elements in the second ferromagnetic layer;
• or an oxide, a nitride, or an oxynitride of a mixed crystal of two or more elements in the second ferromagnetic layer.

A memory device comprising:

• a first ferromagnetic layer;
• an insulating layer above the first ferromagnetic layer;
• a second ferromagnetic layer including iron atoms above the insulating layer;
• an intermediate layer on an upper surface of the second ferromagnetic layer, the intermediate layer including one or more elements identical to one or more elements in the second ferromagnetic layer;
• and
• a conductive capping layer on an upper surface of the intermediate layer, the capping layer including one or more elements identical to one or more of the elements in the intermediate layer, and including a material having a Vickers hardness higher than a Vickers hardness of iron atoms.

A memory device comprising:

• a first ferromagnetic layer;
• an insulating layer above the first ferromagnetic layer;
• a second ferromagnetic layer above the insulating layer, the second ferromagnetic layer including iron atoms;
• a capping layer on an upper surface of the second ferromagnetic layer, the capping layer including one or more elements identical to one or more elements in the second ferromagnetic layer;
• and
• an electrode on an upper surface of the capping layer, the electrode including one or more elements identical to one or more of the elements in the capping layer and including a material having a Vickers hardness higher than a Vickers hardness of an iron atom,
• wherein:
• the second ferromagnetic layer further includes boron atoms,
• the capping layer is capable of absorbing boron atoms, and
• the electrode includes an oxide or nitride.