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US 11,393,973 B2Granted
Hafnium-zirconium oxide (HZO) ferroelectric transducer and method of making the same
AssigneeUniversity of Florida Research Foundation, Inc.
InventorsMayur Ghatge, Glen H. Walters, Toshikazu Nishida, Roozbeh Tabrizian
Life of this patent
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Abstract
A nano-mechanical acoustical resonator is designed and fabricated with CMOS compatible techniques to apply to mm-wave RF front-ends and 5G wireless communication systems which have extreme small scale and integrated in 3D sensors and actuators.
Claims20
A two-port acoustic resonator, comprising:
- a substrate;
- a first aluminum nitride (AlN) layer disposed on the substrate;
- a first molybdenum (Moly) layer disposed on the first AlN layer;
- a first transducer formed on the first Moly layer, wherein the first transducer comprises:
- a second AlN layer disposed on the first Moly layer, and
- a second Moly layer disposed on the second AlN layer;
- and
- a second transducer formed on the second Moly layer, wherein the second transducer comprises:
- a first hafnium zirconium oxide (HZO) layer disposed on the second Moly layer,
- a first titanium nitride (TiN) layer on top of the first HZO layer, and
- a first conductive layer deposited on the first HZO layer,
- wherein the second transducer is located in the vicinity of the first transducer, and
- wherein the second transducer comprises a second conductive layer disposed on the first Moly layer.
10 more elements
A method of fabricating a two-port acoustic resonator, comprising,
- providing a silicon-on-insulator substrate;
- depositing a first aluminum nitride (AlN) layer on the substrate, wherein the first AlN layer is a seed layer;
- depositing a first molybdenum (Moly) layer on the first AlN layer;
- depositing a second AlN layer on the first Moly layer;
- depositing a second Moly layer on the second AlN layer;
- patterning the second Moly layer to define a first transducer;
- depositing a first hafnium zirconium oxide (HZO) layer;
- depositing a first titanium nitride (TiN) layer on the HZO layer;
- depositing a first conductive film on the first TiN layer;
- patterning the first conductive film, the first TiN layer and the first HZO layer to form the first transducer;
- patterning the second AlN layer to define a second transducer;
- depositing a second conductive layer on the second transducer;
- and
- releasing the two-port acoustic resonator by etching a trench around and removing the substrate.
11 more elements
A one-port acoustic resonator, comprising:
- a substrate;
- a first conductive layer disposed on the substrate;
- a first titanium nitride (TiN) layer disposed on the first conductive layer;
- a one-port transducer formed on the first TiN layer, wherein the one-port transducer comprises:
- an HZO layer disposed on the first TiN layer,
- a molybdenum (Moly) layer disposed on the HZO layer, and
- a second TiN layer disposed on the Moly layer;
- and
- a second conductive layer disposed on the second TiN layer.
6 more elements
Dependencies are inferred from the claim text.