Large metal pads over TSV
AssigneeInvensas Bonding Technologies, Inc.
InventorsGuilian Gao, Bongsub Lee, Gaius Gillman Fountain, Jr., Cyprian Emeka Uzoh, Laura Wills Mirkarimi, Belgacem Haba, Rajesh Katkar
Life of this patent
Estimating the term…
Abstract
Representative techniques and devices including process steps may be employed to mitigate the potential for delamination of bonded microelectronic substrates due to metal expansion at a bonding interface. For example, a metal pad having a larger diameter or surface area (e.g., oversized for the application) may be used when a contact pad is positioned over a TSV in one or both substrates.
Claims15
A method of forming a microelectronic assembly having a plurality of metal contact pads and at least one through substrate via (TSV), the method comprising:
- providing a first TSV in a first substrate having a first upper surface, the first TSV normal to the first upper surface;
- forming a first metal contact pad in the first upper surface, the first metal contact pad electrically coupled to or formed with the first TSV, the first metal contact pad extending partially into the first substrate below the first upper surface and aligned with the first TSV in the direction from the first upper surface through the first substrate;
- forming a second metal contact pad in the first upper surface, wherein no TSV is disposed under the second metal contact pad in the direction from the first upper surface through the first substrate;
- and
- planarizing the first upper surface to have a predetermined maximum surface variance for direct bonding, the planarizing adjusting a first recess of the first metal contact pad relative to the first upper surface by a first amount and a second recess of the second metal contact pad relative to the first upper surface by a second amount that is less than the first amount to compensate for thermal expansion of the TSV, the first metal contact pad, and the second metal contact pad relative to the first upper surface.
A method of forming a microelectronic assembly having a plurality of metal contact pads and at least one through substrate via (TSV), the method comprising:
- forming a first TSV provided within a first substrate having a first upper surface, the first TSV extending into the first substrate in a direction normal to the first upper surface;
- forming a first metal contact pad and a second metal contact pad in the first upper surface, the first metal contact pad extending partially into the first substrate below the first upper surface, the first metal contact pad disposed over and aligned with the first TSV in the direction from the first upper surface through the first substrate, the second metal contact pad extending partially into the first substrate below the first upper surface, wherein no TSV is disposed under the second metal contact pad in the direction normal to the first upper surface;
- and
- planarizing the first upper surface to have predetermined maximum surface variance for direct bonding and to adjust a first recess of the first metal contact pad and a second recess of the second metal contact pad relative to the first upper surface so that the first recess of the first metal contact pad compensates for thermal expansion of the TSV and first metal contact pad relative to the first upper surface, wherein an amount of the first recess is greater than an amount of the second recess.
Dependencies are inferred from the claim text.