Resist composition and patterning process

A resist composition comprising a compound having the formula (A):

• wherein R1 is hydroxyl, carboxyl, amino, nitro, fluorine, chlorine, C1-C20 alkyl, C1-C20 alkoxy, C2-C20 acyloxy, C2-C20 alkoxycarbonyl, —NR1A—C(═O)—R1B, or —NR1A—C(═O)—O—R1B, some or all of the hydrogen atoms on the alkyl, alkoxy, acyloxy and alkoxycarbonyl groups may be substituted by fluorine, chlorine, bromine, hydroxyl or C1-C6 alkoxy,
• R1A is hydrogen or a C1-C6 alkyl group, some or all of the hydrogen atoms on to the alkyl group may be substituted by halogen, hydroxyl, C1-C6 alkoxy, C2-C7 acyl or C2-C7 acyloxy,
• R1B is a C1-C16 alkyl, C2-C16 alkenyl or C6-C12 aryl group, some or all of the hydrogen atoms on these groups may be substituted by halogen, hydroxyl, C1-C6 alkoxy, C2-C7 acyl or C2-C7 acyloxy,
• R2 is a C6-C10 arylene, C1-C8 alkanediyl or C2-C8 alkenediyl group, some or all of the hydrogen atoms on these groups may be substituted by C1-C12 straight or branched alkyl, C2-C12 straight or branched alkenyl, C2-C12 straight or branched alkynyl, C1-C12 straight or branched alkoxy, nitro, acetyl, phenyl or halogen, or some carbon on these groups may be replaced by an ether bond,
• X is bromine or iodine,
• L is a single bond or a C1-C20 divalent hydrocarbon group which may contain an ether bond or ester bond,
• m and n each are an integer, meeting 1≤m≤5, 0≤n≤4, and 1≤m+n≤5.