Back to results
US 11,387,919 B2Granted
High frequency CMOS ultrasonic transducer
AssigneeTexas Instruments Incorporated
InventorsBichoy Bahr, Benjamin Stassen Cook, Scott Robert Summerfelt
Life of this patent
Estimating the term…
Abstract
In described examples of a CMOS IC, an ultrasonic transducer having terminals is formed on a substrate of the IC. CMOS circuitry having ultrasonic signal terminals is formed on the substrate. At least one metal interconnect layer overlies the ultrasonic transducer and the CMOS circuitry. The at least one metal interconnect layer connects the CMOS circuitry ultrasonic signal terminals to the terminals of the ultrasonic transducer.
Claims7
An ultrasonic transducer comprising:
- a substrate;
- a linear array of ferroelectric capacitors (FeCaps) each having a respective length and a respective width arranged in a single row on the substrate, such that the length of each of the array of FeCaps is perpendicular to an axis of the row;
- a waveguide portion of the array of FeCaps positioned in the middle of the row each having a respective first width;
- a reflector portion of the array of FeCaps positioned at a first end of the row, wherein each FeCap in the reflector portion has a respective width that is larger than the first width;
- and
- a radiator portion of the array of FeCaps positioned at a second end of the row opposite the first end, wherein each FeCap in the radiator portion has a respective width that is smaller than the first width.
3 more elements
Dependencies are inferred from the claim text.