Power semiconductor device with charge trapping compensation

A radio frequency (RF) power transmitter device, comprising:

• a RF power semiconductor device configured to receive as an input a RF signal waveform originating from a digital input, and to receive as a further input to the RF signal waveform, from circuitry comprising a digital-to-analog converter, an analog gate bias waveform adapted to compensate for gain error associated with charge-trapping events having a memory effect lasting longer than 1 microsecond on the RF power semiconductor device,
• wherein the analog gate bias waveform is generated from a time-varying gain characteristic outputted by the RF power semiconductor device.

A method of compensating for charge-trapping effects in a radio frequency (RF) power semiconductor device, the method comprising:

• applying an RF input signal waveform, originating from a digital input, to a RF power semiconductor device and measuring a time-varying gain characteristic therefrom, wherein the time-varying gain characteristic includes a gain error associated with charge-trapping events having a memory effect on the RF power semiconductor device lasting longer than 1 microsecond;
• and
• applying an analog gate bias waveform as a further input to the RF input signal waveform, using circuitry comprising a digital-to-analog converter, to the RF power semiconductor device based on the measured time-varying gain characteristic to reduce the RF gain error.