Half-bridge circuit with slew rate control
AssigneeSTMicroelectronics S.r.l.
InventorsAlberto Cattani, Alessandro Gasparini
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AssigneeSTMicroelectronics S.r.l.
InventorsAlberto Cattani, Alessandro Gasparini
Estimating the term…
First and second n-channel FETs are connected in series between first and second terminals with an intermediate switching node. First and second driver circuits drive gates of the first and second n-channel FETs, respectively, in response to drive signals. The first driver circuit does not implement slew-rate control. A first resistor and capacitor are connected in series between the output of the first driver circuit and an intermediate node. A first electronic switch is connected between the intermediate node and the first terminal. A second electronic switch is connected between the intermediate node and the gate terminal of the first n-channel FET. A second resistor and a third electronic switch are connected in series between the gate terminal of the first n-channel FET and the switching node. A control circuit generates the drive signals and a first, second and third control signal for the first, second and third electronic switch.
A circuit, comprising:
Dependencies are inferred from the claim text.