Back to results
US 11,387,630 B1Granted
Laser devices using a semipolar plane
AssigneeKYOCERA SLD Laser, Inc.
InventorsJames W. Raring, You-Da Lin, Christiane Elsass
Life of this patent
Estimating the term…
Abstract
An optical device includes a gallium and nitrogen containing substrate comprising a surface region configured in a (20-2-1) orientation, a (30-3-1) orientation, or a (30-31) orientation, within +/−10 degrees toward c-plane and/or a-plane from the orientation. Optical devices having quantum well regions overly the surface region are also disclosed.
Claims20
A system comprising:
- a housing;
- a laser diode device disposed within the housing;
- a power source electrically coupled to the laser diode device;
- wherein the laser diode device is configured to emit electromagnetic radiation with a peak wavelength of between 400 nm and 500 nm or between 500 nm and 560 nm;
- and
- an application configured with the laser diode device, wherein the application is selected from one of a laser display application, a metrology application, a communications application, a health care application, a surgery application, a projector application, a pointer or illuminator application, a biomedical instrumentation application, a biomedical therapeutics application, an industrial imaging application, or an information technology application, the laser diode device comprising:
- a gallium and nitrogen containing material comprising a semipolar surface configured on a (30-3-1) orientation, a (30-31) orientation, a (20-2-1) orientation, or a (30-3-2) orientation, the semipolar surface having an offcut of the orientation;
- an n-type cladding region overlying the semipolar surface;
- an active region comprising at least one light emitting active layer region overlying the n-type cladding region;
- the light emitting active layer region comprising a quantum well region or a double hetero-structure region;
- a p-type cladding region overlying the active region;
- a conductive oxide overlying the p-type cladding region;
- a laser stripe region comprising at least a portion of the p-type cladding region and the conductive oxide, the laser stripe region being characterized by a cavity orientation substantially parallel to a projection of a c-direction, the laser stripe region having a first end and a second end;
- a first facet provided on the first end of the laser stripe region;
- and
- a second facet provided on the second end of the laser stripe region.
13 more elements
A system comprising:
- a housing;
- a blue laser device;
- a power source electrically coupled to the blue laser device;
- wherein the blue laser device is configured to emit electromagnetic radiation with a peak wavelength of between 400 nm and 500 nm;
- and
- an application configured with the blue laser device, the blue laser device comprising:
- a gallium and nitrogen containing material comprising a semipolar surface configured on a (30-3-1) orientation, a (30-31) orientation, a (20-2-1) orientation, a (20-21) orientation, or a (30-3-2) orientation, the semipolar surface having an offcut of the orientation;
- an n-type cladding region overlying the semipolar surface;
- an active region comprising at least one light emitting active layer region overlying the n-type cladding region;
- the light emitting active layer region comprising a quantum well region or a double hetero-structure region;
- a laser stripe region overlying the active region, the laser stripe region comprising conductive oxide and being characterized by a cavity orientation substantially parallel to a projection of a c-direction, the laser stripe region having a first end and a second end;
- a first facet provided on the first end of the laser stripe region;
- and
- a second facet provided on the second end of the laser stripe region.
11 more elements
A system comprising:
- a housing having an aperture;
- a laser device;
- a power source electrically coupled to the laser device;
- wherein the laser device is configured to emit an electromagnetic radiation with a peak wavelength of between 400 nm and 500 nm or between 500 nm and 580 nm;
- and
- an application configured with the laser device, the laser device comprising:
- a gallium and nitrogen containing material comprising a semipolar surface configured on a (30-31) orientation, a (30-31) orientation, a (20-2-1) orientation, a (20-21) orientation, or a (30-3-2) orientation, the semipolar surface having an offcut of the orientation, the offcut of the orientation characterized by an offcut toward an a-plane;
- an n-type cladding region overlying the semipolar surface;
- an active region comprising at least one light emitting active layer region overlying the n-type cladding region;
- the light emitting active layer region comprising a quantum well region or a double hetero-structure region;
- a p-type cladding region overlying the active region;
- a laser stripe region overlying a portion of the semipolar surface, the laser stripe region being characterized by a cavity orientation substantially parallel to a projection of a c-direction, the laser stripe region having a first end and a second end;
- a first etched facet provided on the first end of the laser stripe region;
- and
- a second etched facet provided on the second end of the laser stripe region.
12 more elements
Dependencies are inferred from the claim text.