Intermediate ultraviolet laser diode device
AssigneeKYOCERA SLD Laser, Inc.
InventorsJames W. Raring, Melvin McLaurin, Paul Rudy, Po Shan Hsu, Alexander Sztein
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Abstract
An intermediate ultraviolet laser diode device includes a gallium and nitrogen containing substrate member comprising a surface region, a release material overlying the surface region, an n-type gallium and nitrogen containing material; an active region overlying the n-type gallium and nitrogen containing material; a p-type gallium and nitrogen containing material; a first transparent conductive oxide material overlying the p-type gallium and nitrogen containing material; and an interface region overlying the first transparent conductive oxide material.
Claims20
An intermediate ultraviolet laser diode device operable at a wavelength of less than 380 nm and greater than 200 nm, the device comprising:
- a gallium and nitrogen containing substrate member comprising a surface region, a release material overlying the surface region, and an n-type aluminum, gallium, and nitrogen containing material;
- an active region comprising aluminum, gallium, and nitrogen containing material overlying the n-type aluminum, gallium, and nitrogen containing material, and a p-type aluminum, gallium, and nitrogen containing material;
- a first transparent conductive oxide material with a band gap energy of greater than 3.2 eV and less than 7.5 eV overlying the p-type aluminum, gallium, and nitrogen containing material, and an interface region overlying the first transparent conductive oxide material;
- and
- a handle substrate bonded to the interface region.
An intermediate laser diode device operable at a wavelength of less than 380 nm and greater than 200 nm, the device comprising:
- a gallium and nitrogen containing substrate member comprising a surface region, a release material overlying the surface region, and an n-type aluminum, gallium, and nitrogen containing material;
- an active region overlying the n-type aluminum, gallium, and nitrogen containing material, and a p-type aluminum, gallium, and nitrogen containing material;
- a first transparent conductive oxide region with an band gap energy of greater than 3.2 eV overlying the p-type aluminum, gallium, and nitrogen containing material, and an interface region overlying the first transparent conductive oxide region;
- and
- a handle substrate bonded to the interface region;
- wherein the interface region comprises a contact region of metal, semiconductor, or transparent conductive oxide;
- wherein the release material is a semiconductor, a metal, or a dielectric;
- and
- wherein the active region comprises a plurality of quantum well regions.
An intermediate laser diode device operable at a wavelength of less than 380 nm and greater than 200 nm, the device comprising:
- a gallium and nitrogen containing substrate member comprising a surface region, a release material overlying the surface region, and an n-type aluminum, gallium, and nitrogen containing material;
- an active region overlying the n-type aluminum, gallium, and nitrogen containing material, and a p-type aluminum, gallium, and nitrogen containing material;
- a first transparent conductive oxide layer with an band gap energy of greater than 3.2 eV overlying the p-type aluminum, gallium, and nitrogen containing material, and an interface region overlying the first transparent conductive oxide layer;
- and
- a handle substrate bonded to the interface region.
Dependencies are inferred from the claim text.