Display device with groove overlapped by metal layer

A display panel comprising:

• a substrate comprising an opening area, a display area, and a non-display area between the opening area and the display area;
• a transistor in the display area;
• a display element comprising a pixel electrode electrically connected to the transistor, an intermediate layer on the pixel electrode, and an opposite electrode on the intermediate layer;
• a first organic insulating layer between the transistor and the pixel electrode, the first organic insulating layer extending to the non-display area;
• a groove in the non-display area and having an undercut structure, the groove separating at least one organic material layer included in the intermediate layer;
• and
• an inorganic structure between the substrate and the first organic insulating layer and having a first opening corresponding to the groove,
• wherein the inorganic structure comprises at least one inorganic insulating layer and at least one metal layer.

An electronic device comprising:

• a display panel including a first area, a second area, and a third area between the first area and the second area;
• and
• a component corresponding to the first area,
• wherein the display panel comprises:
• a substrate having a through hole in the first area;
• a stack structure in the second area and comprising a pixel electrode, an opposite electrode, and an intermediate layer between the pixel electrode and the opposite electrode;
• a groove in the third area and separating at least one organic material layer included in the intermediate layer;
• at least one metal layer in the third area and comprising a first opening overlapping the groove, wherein the groove is defined in a multi-layered film including an organic layer and a first metal layer on the organic layer, and the at least one metal layer is between the substrate and the multi-layered film;
• and
• a transistor and a storage capacitor that are in the second area and electrically connected to the stack structure, wherein the at least one metal layer comprises a same material as at least one of a gate electrode of the transistor, a source electrode of the transistor, a drain electrode of the transistor, or electrodes of the storage capacitor.