Non-blinking quantum dot, preparation method thereof, and quantum dot-based light-emitting diode

A preparation method of a non-blinking quantum dot (NBQD) comprising:

• a core,
• an inner shell layer covering a surface of the core, and
• an outer shell layer covering a surface of the inner shell layer, wherein the core is formed of CdSe or CdmZn1−mSe, 0<m<1,
• wherein the inner shell layer is formed of ZnSe and the outer shell layer is formed of ZnS or ZnO,
• the method comprising the following steps:
• providing a dispersion agent of a core material, a dispersion agent of a material source of the inner shell layer and a dispersion agent of a material source of the outer shell layer, wherein the core material comprises CdSe or CdmZn1−mSe, 0<m<1;
• wherein the material source of the inner shell layer is a mixture of a zinc source and a selenium source;
• and wherein the material source of the outer shell layer is a mixture of a zinc source and a sulfur source, or a zinc oxide source;
• adding the dispersion agent of the material source of the inner shell layer dropwise to the dispersion agent of the core material at a rate of 1-20 mL/h under an anaerobic condition, so that a material of the inner shell layer is grown in situ on a surface of the core material to obtain a dispersion agent of an intermediate, wherein the intermediate comprises a core and an inner shell layer covering a surface of the core;
• and
• adding the dispersion agent of the material source of the outer shell layer dropwise to the dispersion agent of the intermediate at a rate of 1-20 mL/h under an anaerobic condition, so that a material of the outer shell layer is grown in situ on a surface of the intermediate, to obtain an NBQD.