US 11,387,412 B2 · Resistive memory device and manufacturing method thereof

Abstract

A resistive memory device includes a first stacked structure and a second stacked structure. The first stacked structure includes a first bottom electrode, a first top electrode disposed on the first bottom electrode, and a first variable resistance layer disposed between the first bottom electrode and the first top electrode in a vertical direction. The second stacked structure includes a second bottom electrode, a second top electrode disposed on the second bottom electrode, and a second variable resistance layer disposed between the second bottom electrode and the second top electrode in the vertical direction. A thickness of the first variable resistance layer is less than a thickness of the second variable resistance layer for increasing the number of switchable resistance states of the resistive memory device.

Claims17

Dependent claims

A resistive memory device, comprising:

a first stacked structure, comprising:
a first bottom electrode;
a first top electrode disposed on the first bottom electrode;
and
a first variable resistance layer disposed between the first bottom electrode and the first top electrode in a vertical direction;
and
a second stacked structure, comprising:
a second bottom electrode;
a second top electrode disposed on the second bottom electrode;
and
a second variable resistance layer disposed between the second bottom electrode and the second top electrode in the vertical direction, wherein a thickness of the first variable resistance layer is less than a thickness of the second variable resistance layer, a top surface of the first top electrode and a top surface of the second top electrode are coplanar, and a bottom surface of the first top electrode is lower than a bottom surface of the second top electrode in the vertical direction.

8 more elements

A resistive memory device, comprising:

a first stacked structure, comprising:
a first bottom electrode;
a first top electrode disposed on the first bottom electrode;
and
a first variable resistance layer disposed between the first bottom electrode and the first top electrode in a vertical direction;
and
a second stacked structure, comprising:
a second bottom electrode;
a second top electrode disposed on the second bottom electrode;
and
a second variable resistance layer disposed between the second bottom electrode and the second top electrode in the vertical direction, wherein a thickness of the first variable resistance layer is less than a thickness of the second variable resistance layer, and the second variable resistance layer comprises:
a first layer;
and
a second layer disposed on the first layer, wherein a material composition of the first variable resistance layer is identical to a material composition of at least one of the first layer or the second layer, and the second layer comprises a U-shaped structure surrounding the second top electrode in a cross-sectional view of the second variable resistance layer.

11 more elements

Dependencies are inferred from the claim text.

Resistive memory device and manufacturing method thereof

Life of this patent

Resistive memory device and manufacturing method thereof

Life of this patent

Abstract

Claims17