Magnetoresistive random access memory and method of manufacturing the same

A method of fabricating magnetoresistive random access memory, comprising:

• providing a substrate;
• forming a bottom electrode layer, a magnetic tunnel junction stack and a top electrode layer sequentially on said substrate, wherein a material of said top electrode layer is titanium nitride, and a percentage of nitrogen in said titanium nitride gradually decreases from a top surface of top electrode layer to a bottom surface of top electrode layer;
• and
• patterning said bottom electrode layer, said magnetic tunnel junction stack and said top electrode layer into multiple magnetoresistive random access memory cells.