Magnetic of forming magnetic tunnel junction device using protective mask

A method comprising:

• depositing a first electrode layer on a memory film stack;
• depositing a mask layer on the first electrode layer;
• removing portions of the mask layer from a first region of the first electrode layer, remaining portions of the mask layer forming a protective mask covering a second region of the first electrode layer;
• depositing a second electrode layer on the protective mask and on the first region of the first electrode layer;
• and
• patterning the second electrode layer, the protective mask, and the first electrode layer with an ion beam etching process to form a first electrode and a second electrode, the first electrode comprising first patterned portions of the first region of the first electrode layer and the second electrode layer, the second electrode comprising second patterned portions of the second region of the first electrode layer, the protective mask, and the second electrode layer.

A method comprising:

• forming a bottom electrode layer on a first inter-metal dielectric (IMD);
• forming a magnetic tunnel junction (MTJ) film stack on the bottom electrode layer;
• forming a first top electrode layer on the MTJ film stack;
• forming a protective mask covering a first region of the first top electrode layer, a second region of the first top electrode layer being uncovered by the protective mask;
• forming a second top electrode layer on the protective mask and the second region of the first top electrode layer;
• and
• patterning recesses in the second top electrode layer, the first top electrode layer, the MTJ film stack, the bottom electrode layer, and the first IMD, the recesses having a first depth in portions of the first IMD that were beneath the first region of the first top electrode layer, the recesses having a second depth in portions of the first IMD that were beneath the second region of the first top electrode layer, the second depth being greater than the first depth.