Back to results
US 11,387,401 B2Granted
Oriented piezoelectric film, method of manufacturing the same and piezoelectric element
AssigneeCanon Kabushiki Kaisha
InventorsYoshihiro Ohashi, Yoshinori Kotani, Motokazu Kobayashi
Life of this patent
Estimating the term…
Abstract
An oriented piezoelectric film comprises perovskite type crystals expressed by formula (1) shown below: (1−x)NaNbO3-xBaTiO3 (0.01≤x≤0.40) (1) and (111) oriented in pseudocubic crystal notation.
Claims3
An oriented piezoelectric film comprising perovskite type crystals expressed by formula (1) shown below:
- (1−x)NaNbO3-xBaTiO3 (0.01≤x≤0.40) (1);
- wherein the oriented piezoelectric film is (111) oriented in pseudocubic crystal notation, the abundance ratio of (111) orientation as observed by the electron backscatter diffraction (EBSD) method being not less than 80% on the film surface, and the angular dispersion of (111) orientation being within 5 degrees in the inverse pole figure in the normal direction of the film.
A piezoelectric element comprising:
- a lower electrode;
- an oriented piezoelectric film comprising perovskite type crystals expressed by formula (1) shown below:
- (1−x)NaNbO3-xBaTiO3 (0.01≤x≤0.40) (1)
- wherein the oriented piezoelectric film is (111) oriented in pseudocubic crystal notation, the abundance ratio of (111) orientation as observed by the electron backscatter diffraction (EBSD) method being not less than 80% on the film surface, the angular dispersion of (111) orientation being within 5 degrees in the inverse pole figure in the normal direction of the film;
- and
- an upper electrode,
- the lower electrode being laid on the oriented piezoelectric film and the oriented piezoelectric film being laid on the upper electrode.
4 more elements
Dependencies are inferred from the claim text.