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US 11,387,399 B2Granted
Quantum dot devices with back gates
AssigneeIntel Corporation
InventorsJeanette M. Roberts, Ravi Pillarisetty, David J. Michalak, Zachary R. Yoscovits, James S. Clarke, Van H. Le
Life of this patent
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Abstract
Disclosed herein are quantum dot devices, as well as related computing devices and methods. For example, in some embodiments, a quantum dot device may include: a substrate and a quantum well stack disposed on the substrate. The quantum well stack may include a quantum well layer and a back gate, and the back gate may be disposed between the quantum well layer and the substrate.
Claims30
A quantum dot device, comprising:
- a substrate;
- and
- a quantum well stack above the substrate, wherein:
- the quantum well stack includes a quantum well layer and a back gate,
- the back gate is between the quantum well layer and the substrate,
- the quantum well layer is included in a fin extending away from a base,
- a width of the fin is between 10 and 30 nanometers,
- a height of the fin is between 200 and 400 nanometers,
- the back gate is at least partially included in the fin, and
- the substrate is at least partially included in the base.
7 more elements
A method of operating a quantum dot device, comprising:
- applying one or more voltages to one or more gates on a first quantum well stack region to cause a first quantum dot to form in the first quantum well stack region, wherein:
- a back gate is spaced apart from a quantum well layer in the first quantum well stack region such that the quantum well layer is between the back gate and the one or more gates on the first quantum well stack region,
- the quantum well layer is included in a fin extending away from a base,
- a width of the fin is between 10 and 30 nanometers,
- a height of the fin is between 200 and 400 nanometers, and
- the back gate is at least partially included in the fin;
- applying one or more voltages to one or more gates on a second quantum well stack region to cause a second quantum dot to form in the second quantum well stack region;
- and
- sensing a quantum state of the first quantum dot with the second quantum dot.
6 more elements
A quantum dot device, comprising:
- a base;
- a first fin extending away from the base and including a first quantum well layer and a first back gate, wherein the first back gate is between the first quantum well layer and the base;
- a second fin extending away from the base and including a second quantum well layer and a second back gate, wherein the second back gate is between the second quantum well layer and the base;
- a plurality of first gates on a top surface of the first fin;
- a plurality of second gates on a top surface of the second fin;
- wherein:
- projections of the first and second fins onto a plane parallel to the base are parallel,
- an insulating material is between the first fin and the second fin,
- the first quantum well layer is between the first back gate and the first gates, and
- the second quantum well layer is between the second back gate and the second gates.
7 more elements
Dependencies are inferred from the claim text.