Semiconductor light emitting element and method of manufacturing semiconductor light emitting element

A method of manufacturing a semiconductor light emitting element, comprising:

• stacking, on a substrate, an n-type semiconductor layer of an n-type aluminum gallium nitride (AlGaN)-based semiconductor material, an active layer of an AlGaN-based semiconductor material on the n-type semiconductor layer, and a p-type semiconductor layer of a p-type AlGaN-based semiconductor material on the active layer successively;
• removing a portion of each of the p-type semiconductor layer, the active layer, and the n-type semiconductor layer to expose a portion of the n-type semiconductor layer;
• forming a first covering layer made of aluminum oxide (Al2O3) to cover an exposed region of the n-type semiconductor layer, a side of the active layer, and the p-type semiconductor layer;
• removing the first covering layer in part to form an n-side contact electrode that is in contact with the n-type semiconductor layer;
• removing the first covering layer in part to form a p-side contact electrode that is in contact with the p-type semiconductor layer;
• forming a second covering layer that covers the first covering layer, the n-side contact electrode, and the p-side contact electrode;
• removing the second covering layer in part to form an n-side pad electrode that is connected to the n-side contact electrode;
• removing the second covering layer in part to form a p-side pad electrode that is connected to the p-side contact electrode;
• and
• forming a third covering layer made of aluminum oxide (Al2O3) to cover at least a part of each of a surface of the substrate, the second covering layer, a side of the n-side pad electrode, and a side of the p-side pad electrode.