Semiconductor light-emitting element and method of manufacturing semiconductor light-emitting element

A method of manufacturing a semiconductor light-emitting element, comprising:

• forming an active layer made of an AlGaN-based semiconductor material on an n-type semiconductor layer made of an n-type AlGaN-based semiconductor material;
• forming a p-type semiconductor layer on the active layer;
• removing a portion of the p-type semiconductor layer and the active layer to expose a partial region on the n-type semiconductor layer;
• forming a p-side contact electrode made of Rh on the p-type semiconductor layer;
• forming a p-side electrode covering layer made of TiN that covers the p-side contact electrode;
• forming a dielectric protective layer that covers the n-type semiconductor layer, the active layer, the p-type semiconductor layer, and the p-side electrode covering layer;
• and
• forming a p-side opening that extends through the dielectric protective layer on the p-side contact electrode;
• and
• forming a p-side pad electrode in contact with the p-side electrode covering layer in the p-side opening, wherein the method further comprising forming an n-side contact electrode in the partial region on the n-type semiconductor layer;
• forming an n-side electrode covering layer made of TiN that covers the n-side contact electrode;
• forming an n-side opening that extends through the dielectric protective layer on the n-side contact electrode;
• And forming an n-side pad electrode in contact with the n-side electrode covering layer in the n-side opening, wherein the p-side electrode covering layer and the n-side electrode covering layer are formed concurrently.