Flat panel detector and manufacturing method thereof

A manufacturing method of a flat panel detector, the method comprising:

• providing a base substrate;
• forming a bias electrode and a sensing electrode over the base substrate;
• and
• forming an insulating layer over the bias electrode and the sensing electrode;
• wherein:
• the flat panel detector further comprises a thin film transistor and a channel shielding layer;
• wherein:
• the thin film transistor is located on the base substrate;
• the channel shielding layer is located on a side of the thin film transistor being opposite from the base substrate;
• the channel shielding layer is configured to shield a channel region of the thin film transistor from illumination;
• the sensing electrode and the bias electrode are located on a side of the channel shielding layer being opposite from the base substrate;
• and
• an orthographic projection of the channel shielding layer on the base substrate overlaps at least a portion of an orthographic projection of the sensing electrode on the base substrate;
• the flat panel detector further comprises:
• a semiconductor layer located on a side of the insulating layer being opposite from the substrate;
• and
• a storage electrode located between the base substrate and the sensing electrode, the sensing electrode and the storage electrode forming a plate capacitor;
• the sensing electrode and the bias electrode are supported by the insulating layer;
• a difference between a thickness of a region of the insulating layer corresponding to the sensing electrode and a thickness of a region of the insulating layer corresponding to the bias electrode is not greater than a preset threshold;
• the thickness of the region of the insulating layer corresponding to the sensing electrode is a distance between a surface of the sensing electrode distal from the base substrate and a surface of the insulating layer distal from the base substrate;
• the thickness of the region of the insulating layer corresponding to the bias electrode is a distance between a surface of the bias electrode distal from the base substrate and the surface of the insulating layer distal from the base substrate;
• a thickness of the sensing electrode is smaller than a thickness of the bias electrode;
• and
• the thickness of the sensing electrode is a distance between a surface of the sensing electrode adjacent to the base substrate and a surface opposite from the base substrate, and the thickness of the bias electrode is a distance between a surface of the bias electrode adjacent to the base substrate and a surface opposite from the base substrate.

A flat panel detector comprising:

• a base substrate;
• a sensing electrode over the base substrate;
• a bias electrode over the base substrate;
• an insulating layer over the sensing electrode and the bias electrode;
• a semiconductor layer located on a side of the insulating layer being opposite from the substrate;
• and
• a storage electrode, the storage electrode being located between the base substrate and the sensing electrode, and the sensing electrode and the storage electrode forming a plate capacitor;
• wherein:
• the sensing electrode and the bias electrode are supported by the insulating layer;
• a difference between a thickness of a region of the insulating layer corresponding to the sensing electrode and a thickness of a region of the insulating layer corresponding to the bias electrode is not greater than a preset threshold;
• the thickness of the region of the insulating layer corresponding to the sensing electrode is a distance between a surface of the sensing electrode distal from the base substrate and a surface of the insulating layer distal from the base substrate;
• the thickness of the region of the insulating layer corresponding to the bias electrode is a distance between a surface of the bias electrode distal from the base substrate and the surface of the insulating layer distal from the base substrate;
• the difference of a distance between a surface of the sensing electrode being opposite from the base substrate side and the base substrate and a distance between a surface of the bias electrode being opposite from the base substrate and the base substrate is not greater than the preset threshold;
• the thickness of the sensing electrode is smaller than the thickness of the bias electrode;
• a thickness of the insulating layer being described as a distance between a surface of the insulating layer being opposite from the base substrate and the base substrate is uniform;
• a distance between a surface of the sensing electrode adjacent to the base substrate side and the base substrate is greater than a distance between a surface of the bias electrode adjacent to the base substrate side and the base substrate;
• the thickness of the sensing electrode is a distance between a surface of the sensing electrode adjacent to the base substrate and a surface opposite from the base substrate, and the thickness of the bias electrode is a distance between a surface of the bias electrode adjacent to the base substrate and a surface opposite from the base substrate;
• and
• a work function of a material of a portion of the bias electrode in contact with the insulating layer is greater than a work function of a material of a portion of the sensing electrode in contact with the insulating layer.