Single photon avalanche gate sensor device
AssigneeSTMicroelectronics (Crolles 2) SAS
InventorFrancois Roy
Life of this patent
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Abstract
A semiconductor layer is doped with a first doping type and has an upper surface. A first electrode insulated from the semiconductor layer extending through the semiconductor layer from the upper surface. A second electrode insulated from the semiconductor layer extends through the semiconductor layer from the upper surface. The first and second electrodes are biased by a voltage to produce an electrostatic field within the semiconductor layer causing the formation of a depletion region. The depletion region responds to absorption of a photon with an avalanche multiplication that produces charges that are collected at first and second oppositely doped regions within the semiconductor substrate.
Claims20
A photosensor, comprising:
- a semiconductor layer doped with a first doping type and having a first surface and a second surface opposite the first surface;
- a first electrode insulated from the semiconductor layer and extending through the semiconductor layer from the first surface to the second surface;
- a second electrode insulated from the semiconductor layer and extending through the semiconductor layer from the first surface to the second surface;
- wherein the first and second electrodes are configured to be biased by a voltage to produce an electrostatic field within the semiconductor layer causing the formation of a depletion region within the semiconductor layer, said depletion region responding to absorption of a photon with an avalanche multiplication.
A photosensor, comprising:
- a semiconductor layer doped with a first doping type and having a first surface and a second surface opposite the first surface;
- a first vertical insulated gate extending into the semiconductor layer from the first surface;
- a second vertical insulated gate extending into the semiconductor layer from the first surface;
- wherein the first and second vertical insulated gates are configured to be biased by a voltage to produce an electrostatic field within the semiconductor layer causing the formation of a depletion region within the semiconductor layer, said depletion region responding to absorption of a photon with an avalanche multiplication.
Dependencies are inferred from the claim text.