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US 11,387,378 B2Granted
P-ohmic contact structure and photodetector using the same
AssigneeBolb Inc.
InventorsJianping Zhang, Ling Zhou, Ying Gao
Life of this patent
Estimating the term…
Abstract
A photodetector includes an UV transparent n-type structure, an UV transparent p-type structure, and a photon absorbing region sandwiched between the n-type structure and the p-type structure; a p-contact layer formed on the p-type structure; and a p-ohmic contact of a thickness in the range of 0.2-100 nm formed on the p-contact layer, wherein the p-ohmic contact comprises one or more layer of metal oxide.
Claims17
A photodetector comprising:
- an n-type structure, an UV transparent p-type structure, and a photon absorbing region sandwiched between the n-type structure and the UV transparent p-type structure;
- an UV transparent p-contact layer formed on the UV transparent p-type structure, wherein the UV transparent p-contact layer is a strained Mg-doped AlGaN layer with Al-composition in the range of 0.7-1;
- and
- a p-ohmic contact of a thickness in the range of 0.2-100 nm formed on the p-contact layer, wherein the p-ohmic contact comprises one or more layer of metal oxide, wherein the metal oxide is a binary oxide selected from NiOx, InOx, SnOx and RhOx, or a ternary oxide of formula CuMOx, where metal M is selected from Al, Ga, In, Cr, Sr, Sc, and Y;
- or is a spinel type oxide of formula ZnM2Ox, where metal M is selected from Rh, Ir, or Co;
- and when the p-ohmic contact comprises more than one layer of metal oxide, each layer of metal oxide is independently selected from the binary oxide, the ternary oxide, and the spinel type oxide.
3 more elements
A photodetector comprising:
- an n-type structure, an UV transparent p-type structure, and a photon absorbing region sandwiched between the n-type structure and the UV transparent p-type structure;
- an UV transparent p-contact layer formed on the UV transparent p-type structure, wherein the UV transparent p-contact layer is a strained Mg-doped AlGaN layer with Al-composition in the range of 0.7-1;
- and
- a p-ohmic contact of a thickness in the range of 0.2-100 nm formed on the UV transparent p-contact layer, wherein the p-ohmic contact is formed by sequentially depositing one or more layers of metal on the UV transparent p-contact layer and oxidizing the one or more layers of metal to form metal oxide, wherein the metal oxide is a binary oxide selected from NiOx, InOx, SnOx and RhOx, or a ternary oxide of formula CuMOx, where metal M is selected from Al, Ga, In, Cr, Sr, Sc, and Y;
- or is a spinel type oxide of formula ZnM2Ox, where metal M is selected from Rh or Co.
2 more elements
Dependencies are inferred from the claim text.