Semiconductor device
AssigneeDenso Corporation
InventorsKouji Eguchi, Teruaki Kumazawa, Yusuke Yamashita
Life of this patent
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Abstract
A semiconductor device includes; a schottky diode; a semiconductor substrate that includes a first surface and a second surface opposite to the first surface; a schottky electrode that is placed on the first surface and schottky-contacts to the semiconductor substrate; a first electrode placed on the schottky electrode; and a second electrode that is placed on the second surface and is connected to the semiconductor substrate. The schottky electrode is made of a metal material that is a columnar crystal; and a content of carbon on the schottky electrode is less than 6×1019 cm−3 in at least a part of an area of the schottky electrode.
Claims5
A semiconductor device including a schottky diode, the semiconductor device comprising:
- a semiconductor substrate that includes a first surface and a second surface opposite to the first surface;
- a schottky electrode that is placed on the first surface and schottky-contacts to the semiconductor substrate;
- a first electrode placed on the schottky electrode;
- and
- a second electrode that is placed on the second surface and is connected to the semiconductor substrate,
- wherein:
- the schottky electrode is made of a metal material that is a columnar crystal;
- carbon is present in at least a part of an area of the schottky electrode;
- a content of the carbon present in the at least the part of the area of the schottky electrode is less than 6×1019 cm−3, and
- the carbon present in the at least the part of the area of the schottky electrode is a carbon residue from a resist.
Dependencies are inferred from the claim text.