Thin film transistor and manufacturing method thereof and electronic device

A thin film transistor, comprising:

• a substrate, and
• a gate electrode, a gate insulating layer, an active layer, a source electrode and a drain electrode, arranged on the substrate,
• wherein the active layer comprises a channel region between the source electrode and the drain electrode and the channel region comprises an edge region along a channel length direction of the channel region and a main region outside the edge region;
• the thin film transistor further comprises an auxiliary layer, a projection of the auxiliary layer on the substrate is at least partially overlapped with a projection of the edge region of the channel region on the substrate, and the auxiliary layer is configured to enhance a turn-on voltage of the edge region of the channel region;
• a material of the auxiliary layer is a semiconductor, and the auxiliary layer is between the active layer and the gate insulating layer;
• the work function of the material of the auxiliary layer is lower than a work function of a material of the active layer.

A manufacturing method of a thin film transistor, comprising:

• forming a gate electrode, an auxiliary layer, a gate insulating layer, an active layer, a source electrode and a drain electrode on a substrate,
• wherein the active layer comprises a channel region between the source electrode and the drain electrode and the channel region comprises an edge region along a channel length direction of the channel region and a main region outside the edge region;
• a projection of the auxiliary layer on the substrate is at least partially overlapped with a projection of the edge region of the channel region on the substrate, and the auxiliary layer is configured to enhance a turn-on voltage of the edge region of the channel region;
• a material of the auxiliary layer is a conductive material, the auxiliary layer is located between the gate electrode and the gate insulating layer, and is electrically connected with the gate electrode;
• a work function of a material of the auxiliary layer is higher than a work function of a material of the gate electrode.