Amorphous silicon thin film transistor and method for manufacturing the same

A method for manufacturing an amorphous silicon thin film transistor, comprising steps as follows:

• S10:
• providing a substrate and forming a gate electrode layer on the substrate;
• S20:
• forming a gate insulating layer on the gate electrode layer;
• S30:
• forming an active layer on the gate insulating layer;
• S40:
• forming a source/drain electrode layer on the active layer, wherein the source/drain electrode layer is made of copper or aluminum;
• S50:
• forming an N+-doped layer between the active layer and the source/drain electrode layer;
• S60:
• forming a protective insulating layer on the source/drain electrode layer, wherein a channel is formed in the source/drain electrode layer and penetrates the N+-doped layer and the protective insulating layer, wherein in step S60, before the channel is formed, the source/drain electrode layer is coated with a photoresist material, and the protective insulating layer and the source/drain electrode layer are etched with cupric acid which contains an additive to form the channel;
• and
• S70:
• coating with a passivation layer in the channel and on the protective insulating layer, wherein the protective insulating layer and the source/drain electrode layer are flush with each other in the channel.