Transistor with phase transition material region between channel region and each source/drain region

A transistor, comprising:

• a semiconductor substrate;
• a first source/drain region and a second source/drain region in the semiconductor substrate;
• a channel region between the first source/drain region and the second source/drain region in the semiconductor substrate;
• a first phase transition material (PTM) region between the first source/drain region and the channel region;
• a second PTM region between the second source/drain region and the channel region;
• a gate over the channel region;
• and
• a spacer about the gate,
• wherein the first and second PTM regions are aligned under the spacer in the semiconductor substrate, and
• wherein each PTM region includes a material selected from a group comprising:
• vanadium dioxide (VO2), and vanadium oxide (V2O5), and
• wherein the first source/drain region and the second source/drain region and the channel region include a semiconductor material.