Source/drain junction formation
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChun Hsiung Tsai, Sheng-Wen Yu, Ziwei Fang
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Abstract
A method includes forming a first channel region and a first gate structure formed over the first channel region. A first source/drain region is formed adjacent the first channel region and the first source/drain region includes a crystalline structure doped with a first dopant. A first silicide is formed over the first source/drain region. The first source/drain region includes a first concentration of the first dopant between 2.0×1021 atoms per centimeter cubed and 4.0×1021 atoms per centimeter cubed at a depth of 8 to 10 nanometers.
Claims20
A method comprising:
- forming a first recess in a substrate;
- epitaxially growing a first source/drain region in the first recess;
- performing a first pre-amorphization implant to the first source/drain region;
- following the first pre-amorphization implant, doping the first source/drain region with a first dopant;
- and
- performing an anneal to recrystallize the first source/drain region, wherein following the anneal a peak concentration of the first dopant is at a first depth of the first source/drain region, the first depth being between 8 nm and 10 nm, wherein a concentration of the first dopant decreases in a logarithmic gradient deeper than the first depth.
A method comprising:
- forming a first recess in a substrate;
- epitaxially growing a first source/drain region in the first recess;
- performing a first pre-amorphization implant to the first source/drain region;
- doping the first source/drain region with a first dopant;
- and
- performing an anneal to recrystallize the first source/drain region, wherein following the anneal, a peak concentration of the first dopant is at a first depth of the first source/drain region, the first depth being between 8 nm and 10 nm, wherein a concentration of the first dopant decreases logarithmically every 0.5 nm.
A method comprising:
- forming a first source/drain epitaxy adjacent a first gate structure;
- forming a second source/drain epitaxy adjacent a second gate structure;
- performing a first pre-amorphization implant to the first source/drain epitaxy and the second source/drain epitaxy;
- doping the first source/drain epitaxy with a first dopant and the second source/drain epitaxy with a second dopant;
- and
- performing an anneal to recrystallize the first source/drain epitaxy and to recrystallize the second source/drain epitaxy, wherein following the anneal a first peak concentration of the first dopant is at a first depth of the first source/drain epitaxy and a second peak concentration of the second dopant is at a second depth of the second source/drain epitaxy, the first depth and second depth each between about 8 to 10 nm.
Dependencies are inferred from the claim text.