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US 11,387,354 B2Granted
BiMOS transistor
AssigneeSTMicroelectronics S.r.l.
InventorsPhilippe Galy, Louise De Conti
Life of this patent
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Abstract
A BiMOS-type transistor includes a gate region, a channel under the gate region, a first channel contact region and a second channel contact region. The first channel contact region is electrically coupled to the gate region to receive a first potential. The second channel contact region is electrically coupled to receive a second potential.
Claims23
A BiMOS-type transistor, comprising:
- a gate region;
- a first channel contact region;
- wherein a first potential is electrically applied to both said gate region and said first channel contact region;
- and
- a second channel contact region;
- wherein a second potential different than the first potential is electrically applied to said second channel contact region.
3 more elements
An electrostatic discharge protection circuit, comprising:
- a BiMOS-type transistor, comprising:
- a gate region;
- a drain region coupled to an input of the electrostatic discharge protection circuit;
- a source region coupled to an output of the electrostatic discharge protection circuit;
- a first channel contact region;
- wherein a first potential is electrically applied to both said gate region and said first channel contact region;
- and
- a second channel contact region;
- wherein a second potential, different from the first potential, is electrically applied to both said source region and said second channel contact region.
6 more elements
Dependencies are inferred from the claim text.