Power semiconductor device and manufacturing method thereof
AssigneeMitsubishi Electric Corporation
InventorNorikazu Sakai
Life of this patent
Estimating the term…
Abstract
An object of the present disclosure is to suppress a shrinkage cavity without affecting the layout or the insulation performance of the semiconductor element in a power semiconductor device. A power semiconductor device includes a heat radiation plate; an insulating substrate bonded in a bonding region on an upper surface of the heat radiation plate with a bonding material containing a plurality of elements having different solidification points; a semiconductor element mounted on an upper surface of the insulating substrate; and a bonding wire bonded in the bonding region on the upper surface of the heat radiation plate such that the bonding wire surrounds the semiconductor element in plan view.
Claims7
A power semiconductor device comprising:
- a heat radiation plate;
- an insulating substrate including a lower surface metal pattern, an insulating base material, and an upper surface metal pattern, the lower surface metal pattern being bonded in a bonding region on an upper surface of the heat radiation plate with a bonding material containing a plurality of elements having different solidification points;
- a semiconductor element mounted on an upper surface of the insulating substrate;
- and
- a metal wire bonded in the bonding region on the upper surface of the heat radiation plate such that the metal wire surrounds the semiconductor element and is provided within a perimeter of the lower surface metal pattern in plan view.
A manufacturing method of a power semiconductor device comprising:
- bonding a metal wire on an upper surface of a heat radiation plate;
- bonding an insulating substrate, which includes a lower surface metal pattern, an insulating base material, and an upper surface metal pattern, in an upper surface of the heat radiation plate, with a bonding material containing a plurality of elements having different solidification points;
- and
- mounting a semiconductor element on an upper surface of the insulating substrate, wherein
- the metal wire is bonded in a bonding region to which the insulating substrate on the upper surface of the heat radiation plate is bonded, such that the metal wire surrounds the semiconductor element and is provided within a perimeter of the lower surface metal pattern in plan view.
Dependencies are inferred from the claim text.