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US 11,387,351 B2Granted
Semiconductor device and method
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsBo-Feng Young, Che-Cheng Chang, Po-Chi Wu
Life of this patent
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Abstract
A manufacturing process and device are provided in which a first opening in formed within a substrate. The first opening is reshaped into a second opening using a second etching process. The second etching process is performed with a radical etch in which neutral ions are utilized. As such, substrate push is reduced.
Claims20
A semiconductor device comprising:
- a first opening extending into a semiconductor fin a first distance;
- a second opening extending into the semiconductor fin the first distance, the first opening being separated from the second opening by at least a portion of the semiconductor fin, wherein a surface of the semiconductor fin extends from the first opening to the second opening a first distance no greater than about 40 nm;
- and
- a first gate stack at least partially overlying the surface of the semiconductor fin.
1 more element
A semiconductor device comprising:
- a semiconductor substrate with a first region and a second region;
- a first set of gate stacks located over a first set of semiconductor fins within the first region, wherein the first set of gate stacks are separated by a first distance;
- a second set of gate stacks located over a second set of semiconductor fins within the second region, wherein the second set of gate stacks are separated by a second distance greater than the first distance;
- a first source/drain region in the first region which extends into one of the first set of semiconductor fins to a first depth;
- and
- a second source/drain region in the second region which extends into one of the second set of semiconductor fins to a second depth, the second depth being different from the first depth and still within 3 nm of the first depth.
3 more elements
A semiconductor device comprising:
- a semiconductor fin over a semiconductor substrate, the semiconductor fin having a first surface facing away from the semiconductor substrate, the first surface having a length no greater than about 40 nm;
- and
- a first source/drain region at one end of the first surface, the first source/drain region extending into the semiconductor fin a first depth of between about 300 Å and about 450 Å, wherein the first surface of the semiconductor fin starts at the first source/drain region and ends at a second source/drain region.
Dependencies are inferred from the claim text.