Semiconductor fin structure and method of fabricating the same

A method of forming a semiconductor structure, the method comprising:

• providing a semiconductor fin extending along a substrate;
• forming a fin cut mask, the fin cut mask defining a number of masked regions and a number of cut regions;
• cutting the fin into a number of fin parts by etching the fin in the cut regions;
• forming an epitaxial semiconductor capping layer continuously covering at least a top surface and opposing sidewall surfaces of the fin prior to forming the fin cut mask, wherein the opposing sidewall surfaces of the fin extend vertically above the substrate with the corresponding top surface of the fin extending horizontally therebetween, wherein a capping layer material of the epitaxial semiconductor capping layer and a fin material of the semiconductor fin are lattice mismatched;
• forming a fill structure by refilling gaps in the cut regions between fin parts with an insulating material;
• and
• subsequent to forming the fill structure, removing the epitaxial semiconductor capping layer in the cut regions between fin parts while preserving the epitaxial semiconductor capping layer covering the opposing sidewall surfaces of the fin.