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US 11,387,345 B2Granted
Semiconductor device
AssigneeSamsung Electronics Co., Ltd.
InventorsGuk Il An, Keun Hwi Cho, Dae Won Ha, Seung Seok Ha
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Abstract
A semiconductor device includes a substrate, a gate structure on the substrate and a first conductive connection group on the gate structure. The gate structure includes a gate spacer and a gate electrode. The first conductive connection group includes a ferroelectric material layer. At least a part of the ferroelectric material layer is disposed above an upper surface of the gate spacer. And the ferroelectric material layer forms a ferroelectric capacitor having a negative capacitance in the first conductive connection group.
Claims20
A semiconductor device comprising:
- a transistor including a gate structure and a nanosheet on a substrate, the gate structure including a gate spacer and a gate electrode, the gate electrode extending in a first direction and having a first portion on an active region of the substrate and a second portion on a field region of the substrate;
- and
- a first conductive connection group on the first portion of the gate electrode of the gate structure, the first conductive connection group including a ferroelectric material layer,
- wherein at least a part of the ferroelectric material layer is disposed above an upper surface of the gate spacer,
- wherein the first conductive connection group includes a gate contact plug being in contact with the gate electrode, and
- wherein a first width of the gate contact plug in the first direction is smaller than a width of the first portion of the gate electrode in the first direction.
3 more elements
A semiconductor device comprising:
- a substrate with an active region and a field region defining the active region;
- a transistor including a gate electrode, a nanosheet and a source/drain region, the gate electrode having a first portion on the active region of the substrate and a second portion on the field region of the substrate, the source/drain region disposed in a region of the substrate directly adjacent to at least one side of the gate electrode;
- a first conductive connection group on the first portion of the gate electrode, the first conductive connection group being connected to the first portion of the gate electrode and including a ferroelectric material layer;
- and
- a second conductive connection group, without connection to the first conductive connection group, connected to the source/drain region and disposed on the source/drain region,
- wherein the first conductive connection group includes a gate contact plug being in contact with the gate electrode,
- wherein the second conductive connection group includes a source/drain contact plug being in contact with the source/drain region,
- wherein an upper surface of the gate contact plug is positioned at substantially the same height as an upper surface of the source/drain contact plug relative to an upper surface of the substrate, and
- wherein a height from an upper surface of the gate electrode to the uppermost surface of the ferroelectric material layer is equal to or greater than a height from the upper surface of the gate electrode to the upper surface of the source/drain contact plug.
6 more elements
A semiconductor device comprising:
- a substrate including an active region and a field region defining the active region;
- a transistor including a nanosheet and a first gate electrode on the substrate, the first gate electrode extending over the active region and the field region in a first direction and including a first portion on the active region and a second portion on the field region;
- and
- a first gate contact plug on the first portion of the first gate electrode, the first gate contact plug being in contact with the first gate electrode and including a ferroelectric material layer,
- wherein a first width of the first gate contact plug in the first direction is smaller than a width of the first portion of the first gate electrode in the first direction.
2 more elements
Dependencies are inferred from the claim text.