Method of manufacturing a semiconductor device having a doped work-function layer
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChia-Ching Lee, Hung-Chin Chung, Chung-Chiang Wu, Hsuan-Yu Tung, Kuan-Chang Chiu, Chien-Hao Chen, Chi On Chui
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Abstract
A semiconductor device and method of manufacture are provided. In some embodiments a treatment process is utilized to treat a work function layer. The treatment prevents excessive oxidation of the work function layer during subsequent processing steps, such as application of a subsequent photoresist material, thereby allowing the work function layer to be thinner than otherwise.
Claims20
A method of manufacturing a semiconductor device, the method comprising:
- forming a fin from a semiconductor substrate;
- forming a gate dielectric over the fin;
- forming a work function layer over the gate dielectric;
- modifying a surface of the work function layer, wherein the modifying the surface is performed at least in part with a chemical soak that implants an active element;
- and
- performing a post-treatment process after the modifying the surface of the work function layer, the post-treatment process reducing a number of dangling bonds within the work function layer.
A method of manufacturing a semiconductor device, the method comprising:
- depositing a gate dielectric over a channel region of a semiconductor material, the channel region being adjacent to multiple sides of the semiconductor material;
- depositing a work function layer over the gate dielectric using an atomic layer deposition process;
- soaking the work function layer in a precursor material, wherein the precursor material is titanium chloride, and wherein the soaking the work function layer forms a dopant layer within the work function layer;
- and
- depositing a fill material over the work function layer.
A method of manufacturing a semiconductor device, the method comprising:
- forming a dielectric material adjacent to a semiconductor fin;
- forming a work function layer over the dielectric material, the work function layer comprising a dopant layer, wherein the dopant layer comprises titanium, boron, or chromium;
- and
- forming a fill material over the work function layer.
Dependencies are inferred from the claim text.