US 11,387,343 B2 · Stack and semiconductor device

Abstract

A stack with excellent electrical characteristics and reliability is provided. The stack includes an insulator, a conductor, and a first oxide between the insulator and the conductor; the first oxide includes a first c-axis-aligned crystal region; and a c-axis of the first crystal region is substantially perpendicular to a plane of the first oxide on the insulator side. Alternatively, the stack includes an insulator, a conductor, a first oxide between the insulator and the conductor, and a second oxide facing the first oxide with the insulator therebetween; the first oxide includes a first c-axis-aligned crystal region; a c-axis of the first crystal region is substantially perpendicular to a plane of the first oxide on the insulator side; the second oxide includes a second c-axis-aligned crystal region; and a c-axis of the second crystal region is substantially perpendicular to a plane of the second oxide on the insulator side.

Claims13

Dependent claims

A semiconductor device comprising:

a first oxide comprising a first crystal region, a second oxide comprising a second crystal region, a third oxide, a first insulator between the first oxide and the second oxide, and a first conductor,
wherein the first oxide is in contact with a bottom surface of the first conductor,
wherein the first insulator is in contact with a bottom surface of the first oxide,
wherein the second oxide is in contact with a bottom surface of the first insulator,
wherein the third oxide is in contact with a bottom surface of the second oxide,
wherein a c-axis of the first crystal region is substantially perpendicular to the bottom surface of the first oxide, and
wherein a c-axis of the second crystal region is substantially perpendicular to a top surface of the second oxide.

4 more elements

Dependencies are inferred from the claim text.

Stack and semiconductor device

Life of this patent

Stack and semiconductor device

Life of this patent

Abstract

Claims13