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US 11,387,340 B2Granted
High power transistor with interior-fed fingers
AssigneeWolfspeed, Inc.
InventorsFrank Trang, Zulhazmi Mokhti, Haedong Jang
Life of this patent
Estimating the term…
Abstract
A transistor device includes a gate finger and a drain finger extending on a semiconductor structure, a gate bond pad coupled to the gate finger, and a drain bond pad coupled to the drain finger. The gate bond pad extends on the gate finger and/or the drain bond pad extends on the drain finger.
Claims22
A transistor device, comprising:
- a gate finger and a drain finger extending on a semiconductor structure, each having a respective longitudinal axis that extends in a first direction;
- a gate bond pad coupled to the gate finger, the gate bond pad comprising a surface configured to be bonded to a first bond wire;
- and
- a drain bond pad coupled to the drain finger, the drain bond pad comprising a surface configured to be bonded to a second bond wire,
- wherein the gate bond pad and the drain bond pad each have a respective longitudinal axis that extends in a second direction that crosses the first direction, and
- wherein a portion of the gate bond pad extends in the second direction and vertically overlaps both the gate finger and the drain finger.
3 more elements
A transistor device, comprising:
- a gate finger and a drain finger;
- a gate interconnect coupled to the gate finger;
- a drain interconnect coupled to the drain finger;
- a gate bond pad coupled to the gate interconnect at an interior position of the gate interconnect;
- a first bond wire that is bonded to a surface of the gate bond pad at a first location on the gate bond pad that vertically overlaps an active region of the transistor device;
- a drain bond pad coupled to the drain interconnect at an interior position of the drain interconnect;
- and
- a second bond wire that is bonded to a surface of the drain bond pad at a second location on the gate bond pad that vertically overlaps the active region of the transistor device,
- wherein the gate bond pad extends on the active region of the transistor device and vertically overlaps the gate finger and/or the drain bond pad extends on the active region of the transistor device and vertically overlaps the drain finger.
6 more elements
A transistor device, comprising;
- a gate finger having a longitudinal axis extending in a first direction;
- a drain finger having a longitudinal axis extending in the first direction;
- a gate bond pad having a longitudinal axis extending in a second direction, crossing the first direction, and having a first bond wire coupled thereto;
- a drain bond pad having a longitudinal axis extending in the second direction and having a second bond wire coupled thereto;
- and
- an isolation material at a level that is between the first bond wire and the second bond wire in the first direction, the isolation material extending on and overlapping both the gate finger and the drain finger,
- wherein the gate bond pad extends on and vertically overlaps the gate finger and/or the drain bond pad extends on and vertically overlaps the drain finger.
4 more elements
Dependencies are inferred from the claim text.