Semiconductor device and method for manufacturing the same

Abstract

The present disclosure provides a semiconductor device and a method for manufacturing the same, and it relates to a field of semiconductor technology. The semiconductor device includes a substrate, a semiconductor layer, a dielectric layer, a source, a drain, and a gate, wherein a first face of the gate close to a side of the drain and close to the semiconductor layer has a first curved face. A gate trench corresponding to the gate is provided on the dielectric layer, a material of the gate being filled in the gate trench, and at least a part of a second face of the gate trench in contact with the gate is a second curved face which extends from a surface of the dielectric layer away from the semiconductor layer toward the semiconductor layer.

Dependencies are inferred from the claim text.