Semiconductor device with electrode plating deposition
AssigneeRenesas Electronics Corporation
InventorTakehiro Ueda
Life of this patent
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Abstract
The semiconductor device includes a first electrode, a second electrode electrically coupled to the first electrode, and a third electrodes electrically coupled to at least one of the first and the second electrode, a first plating deposition portion on the first electrode, a second and a third plating deposition portions formed on the second and the third electrode, respectively. The areas of the second and the third plating deposition portion are smaller than the area of the first plating deposition portion. The periphery length of the third plating deposition portion is longer than the periphery length of the second plating deposition portion.
Claims14
A semiconductor device comprising:
- a first electrode;
- a second electrode electrically coupled to the first electrode;
- a third electrode electrically coupled to at least one of the first electrode and the second electrode;
- a first plating deposition portion formed on the first electrode;
- a second plating deposition portion formed on the second electrode and having an area smaller than an area of the first plating deposition portion;
- and
- a third plating deposition portion formed on the third electrode and having an area smaller than the area of the first plating deposition portion,
- wherein a periphery length of the third plating deposition portion is longer than a periphery length of the second plating deposition portion, and
- wherein the third electrode is arranged in a dicing region.
A semiconductor device comprising:
- a first electrode;
- a second electrode electrically coupled to the first electrode;
- a third electrode electrically coupled to at least one of the first electrode and the second electrode and arranged in a dicing region;
- a first plating deposition portion formed on the first electrode;
- a second plating deposition portion formed on the second electrode and having an area smaller than an area of the first plating deposition portion;
- and
- a third plating deposition portion formed on the third electrode and having an area smaller than the area of the first plating deposition portion.
A semiconductor device comprising:
- a first electrode;
- a second electrode electrically coupled to the first electrode;
- a third electrode electrically coupled to at least one of the first electrode and the second electrode;
- a first plating deposition portion formed on the first electrode;
- a second plating deposition portion formed on the second electrode and having an area smaller than an area of the first plating deposition portion;
- and
- a third plating deposition portion formed on the third electrode and having an area smaller than the area of the first plating deposition portion,
- wherein a periphery length of the third plating deposition portion is longer than a periphery length of the second plating deposition portion,
- wherein the third electrode includes a first side and a second side opposing to each other,
- wherein each of the first side and the second side has a convex-concave shape, and
- wherein the third electrode includes wide and narrow portions of intervals between the first side and the second side alternately arranged.
Dependencies are inferred from the claim text.