Method for manufacturing semiconductor device
AssigneeMitsubishi Electric Corporation
InventorTasuku Sumino
Life of this patent
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Abstract
A resist (4) is applied on a semiconductor substrate (1) and a first opening (5) and a second opening (6) whose width is narrower than that of the first opening (5) are formed at the resist (4). The semiconductor substrate (1) is wet-etched using the resist (4) as a mask to form one continuous recess (7) below the first opening (5) and the second opening (6). After forming the recess (7), a shrink material (8) is cross-linked with the resist (4) to block the second opening (6) without blocking the first opening (5). After blocking the second opening (6), a gate electrode (11) is formed within the recess (7) via the first opening (5).
Claims6
A method for manufacturing a semiconductor device comprising:
- applying a resist on a semiconductor substrate and forming a first opening and a second opening whose width is narrower than that of the first opening at the resist;
- wet-etching the semiconductor substrate using the resist as a mask to form one continuous recess below the first opening and the second opening;
- after forming the recess, cross-linking a shrink material with the resist to block the second opening without blocking the first opening;
- and
- after blocking the second opening, forming a gate electrode within the recess via the first opening.
Dependencies are inferred from the claim text.