Metal oxide and transistor including metal oxide
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorShunpei Yamazaki
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Abstract
A novel metal oxide is provided. One embodiment of the present invention is a crystalline metal oxide. The metal oxide includes a first layer and a second layer; the first layer has a wider bandgap than the second layer; the first layer and the second layer form a crystal lattice; and in the case where a carrier is excited in the metal oxide, the carrier is transferred through the second layer. Furthermore, the first layer contains an element M (M is one or more selected from Al, Ga, Y, and Sn) and Zn, and the second layer contains In.
Claims18
A crystalline metal oxide comprising a first layer and a second layer,
- wherein the first layer has a wider bandgap than the second layer,
- wherein the first layer and the second layer form a crystal lattice, and
- wherein in the case where a carrier is excited in the crystalline metal oxide, the crystalline metal oxide is configured such that the carrier is transferred through the second layer.
A transistor comprising:
- a crystalline metal oxide;
- and
- a gate, a source, and a drain,
- wherein the crystalline metal oxide comprises a first layer and a second layer,
- wherein the first layer has a wider bandgap than the second layer,
- wherein the first layer and the second layer are each placed substantially parallel to a channel length direction of the transistor,
- wherein the first layer and the second layer form a crystal lattice, and
- wherein in the case where a voltage is applied to the gate to excite a carrier in the crystalline metal oxide, the crystalline metal oxide is configured such that the carrier is transferred from the source to the drain through the second layer.
A transistor comprising:
- a crystalline metal oxide;
- and
- a gate, a source, and a drain,
- wherein the crystalline metal oxide comprises a first layer and a second layer,
- wherein the first layer has a wider bandgap than the second layer,
- wherein the first layer and the second layer are each placed substantially parallel to a formation surface of the crystalline metal oxide,
- wherein the first layer and the second layer form a crystal lattice, and
- wherein in the case where a voltage is applied to the gate to excite a carrier in the crystalline metal oxide, the crystalline metal oxide is configured such that the carrier is transferred from the source to the drain through the second layer.
A transistor comprising:
- a crystalline metal oxide;
- and
- a gate, a source, and a drain,
- wherein the crystalline metal oxide comprises a first layer and a second layer,
- wherein the first layer has a wider bandgap than the second layer,
- wherein the first layer and the second layer are each placed substantially perpendicularly to a formation surface of the crystalline metal oxide,
- wherein the first layer and the second layer form a crystal lattice, and
- wherein in the case where a voltage is applied to the gate to excite a carrier in the crystalline metal oxide, the crystalline metal oxide is configured such that the carrier is transferred from the source to the drain through the second layer.
Dependencies are inferred from the claim text.