III-N tunnel device architectures and high frequency mixers employing a III-N tunnel device

A radio frequency (RF) mixer, comprising:

• input terminals to receive first and second input signals;
• an output terminal to provide an output signal;
• a Group III-Nitride (III-N) device coupled to the input and output terminals, wherein the III-N device comprises a first two-dimensional electron gas (2DEG) and a second 2DEG with a tunnel barrier therebetween;
• and
• a bias voltage supply coupled across a first terminal of the III-N device and a second terminal of the III-N device, wherein the III-N device is to conduct a current between the first and second terminals and through the tunnel barrier in response to the first and second input RF signals, and wherein the current is indicative of a difference between the input RF signals.

A radio frequency (RF) integrated circuit (IC), comprising:

• a local oscillator;
• an amplifier, wherein the amplifier further comprises a first Group III-N (III-N) field effect transistor (FET), the first III-N FET comprising:
• a first source, a first drain, and a first gate electrode therebetween;
• a first polarization layer comprising a first III-N material;
• and
• a first channel layer comprising a second III-N material, wherein a carrier gas within the first channel layer is to couple the first source to the first drain as a function of a first voltage of the first gate electrode;
• and
• an RF mixer coupled to receive a first signal from the local oscillator, and to receive a second signal from the amplifier, wherein the RF mixer further comprises:
• a second III-N FET, the second FET comprising:
• a second source, a second drain, and a second gate electrode therebetween;
• a second polarization layer comprising a third III-N material;
• and
• a second channel layer comprising a fourth III-N material, wherein:
• the carrier gas within the first channel layer is coupled to the second source, and is to couple through the second polarization layer to a second carrier gas within the second channel layer as a function of a second voltage of the second gate electrode;
• and
• wherein the carrier gas within the second channel layer is coupled to the second drain.