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US 11,387,327 B2Granted
Silicide for group III-Nitride devices and methods of fabrication
AssigneeIntel Corporation
InventorsSansaptak Dasgupta, Marko Radosavljevic, Han Wui Then, Paul Fischer, Walid Hafez
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Abstract
A transistor includes a polarization layer above a channel layer including a first III-Nitride (III-N) material, a gate electrode above the polarization layer, a source structure and a drain structure on opposite sides of the gate electrode, where the source structure and a drain structure each include a second III-N material. The transistor further includes a silicide on at least a portion of the source structure or the drain structure. A contact is coupled through the silicide to the source or drain structure.
Claims16
A device comprising:
- a first device layer comprising a Group III-Nitride (III-N) material;
- a second device layer above the first device layer, the second device layer comprising a second III-N material;
- a gate electrode above the second device layer;
- a source structure and a drain structure on opposite sides of the gate electrode, the source structure and a drain structure each comprising a third III-N material;
- a silicide on at least a portion of at least one of the source structure or drain structure;
- and
- a contact coupled through the silicide to the source or drain structure.
4 more elements
A system comprising:
- a processor;
- and
- a radio transceiver coupled to the processor, wherein the transceiver includes a transistor comprising:
- a first device layer comprising a Group III-Nitride (III-N) material;
- a second device layer above the first device layer, the second device layer comprising a second III-N material;
- a gate electrode above the second device layer;
- a source structure and a drain structure on opposite sides of the gate electrode, the source structure and a drain structure each comprising a third III-N material;
- a silicide on at least a portion of at least one of the source structure or drain structure;
- and
- a contact coupled through the silicide to the source or drain structure.
7 more elements
Dependencies are inferred from the claim text.