Silicon carbide semiconductor device and method for manufacturing the same

A method for manufacturing a silicon carbide semiconductor device, the silicon carbide semiconductor device including:

• a silicon carbide semiconductor substrate that has a front surface and a rear surface;
• and
• a plurality of ohmic electrodes that are in ohmic contact with a surface of silicon carbide on at least one of the front surface and the rear surface of the silicon carbide semiconductor substrate,
• the plurality of ohmic electrodes being scattered on the surface of the silicon carbide to provide a concavity and convexity;
• the concavity and convexity having a height due to the ohmic electrodes of less than 1.0 μM;
• the ohmic electrodes including NiSi and MoC disposed inside of the NiSi;
• and
• the NiSi and the MoC being scattered to provide the concavity and convexity, the method comprising:
• forming a metal thin film made of a metal material for forming at least one of silicide and carbide on the silicon carbide to be in ohmic contact with the ohmic electrodes;
• and
• forming the ohmic electrodes by performing a laser anneal with irradiating a laser beam on the metal thin film to react the metal thin film and Si or C in the silicon carbide and to form the at least one of metal silicide and metal carbide, wherein:
• the laser anneal is performed by a top-hat type laser.